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Method of adhesion of wafer

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The method is characterized by consisting of the following steps: (a) depositing a silicon nitride layer (11) on a supporting silicon substrate (12) to a fixed thickness and forming a region (13) for selective oxidation by etching the silicon nitride layer with photolithography and nitride layer etching, (b) forming a silicon oxide layer (13) by the selective oxidation of the region for a gas channel, removing the nitride layer and the selective oxide layer sequentially by using the selective oxide mask, and finally forming the gas channel (14). In this method, both selective oxidation and dry etching can be applied to make the gas channel.

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